Sell FAI FQD12N20 New Stock
#FQD12N20 FAI FQD12N20 New Power Field-Effect Transistor, 9A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3, FQD12N20 pictures, FQD12N20 price, #FQD12N20 supplier
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Email: [email protected]
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Email: [email protected]
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Manufacturer Part Number: FQD12N20
Pbfree Code: No
Part Life Cycle Code: Obsolete
Ihs Manufacturer: FAIRCHILD SEMICONDUCTOR CORP
Part Package Code: TO-252
Package Description: SMALL OUTLINE, R-PSSO-G2
Pin Count: 3
ECCN Code: EAR99
HTS Code: 8541.29.00.95
Manufacturer: Fairchild Semiconductor Corporation
Risk Rank: 5.27
Avalanche Energy Rating (Eas): 210 mJ
Case Connection: DRAIN
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min: 200 V
Drain Current-Max (Abs) (ID): 9 A
Drain Current-Max (ID): 9 A
Drain-source On Resistance-Max: 0.28 Ω
FET Technology: METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code: TO-252
JESD-30 Code: R-PSSO-G2
JESD-609 Code: e0
Moisture Sensitivity Level: 1
Number of Elements: 1
Number of Terminals: 2
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Peak Reflow Temperature (Cel): 260
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 55 W
Pulsed Drain Current-Max (IDM): 36 A
Qualification Status: Not Qualified
Subcategory: FET General Purpose Power
Surface Mount: YES
Terminal Finish: Tin/Lead (Sn/Pb)
Terminal Form: GULL WING
Terminal Position: SINGLE
Time
Power Field-Effect Transistor, 9A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
Pbfree Code: No
Part Life Cycle Code: Obsolete
Ihs Manufacturer: FAIRCHILD SEMICONDUCTOR CORP
Part Package Code: TO-252
Package Description: SMALL OUTLINE, R-PSSO-G2
Pin Count: 3
ECCN Code: EAR99
HTS Code: 8541.29.00.95
Manufacturer: Fairchild Semiconductor Corporation
Risk Rank: 5.27
Avalanche Energy Rating (Eas): 210 mJ
Case Connection: DRAIN
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min: 200 V
Drain Current-Max (Abs) (ID): 9 A
Drain Current-Max (ID): 9 A
Drain-source On Resistance-Max: 0.28 Ω
FET Technology: METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code: TO-252
JESD-30 Code: R-PSSO-G2
JESD-609 Code: e0
Moisture Sensitivity Level: 1
Number of Elements: 1
Number of Terminals: 2
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Peak Reflow Temperature (Cel): 260
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 55 W
Pulsed Drain Current-Max (IDM): 36 A
Qualification Status: Not Qualified
Subcategory: FET General Purpose Power
Surface Mount: YES
Terminal Finish: Tin/Lead (Sn/Pb)
Terminal Form: GULL WING
Terminal Position: SINGLE
Time
Power Field-Effect Transistor, 9A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
Shunlongwei Inspected Every FQD12N20 Before Ship, All FQD12N20 with 6 months warranty.
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