Sell EUPEC BSM400GB60DN2 New Stock

#BSM400GB60DN2 EUPEC BSM400GB60DN2 New IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal bae plate, BSM400GB60DN2 pictures, BSM400GB60DN2 price, #BSM400GB60DN2 supplier
——————————————————————-
Email: sales@shunlongwei.com

——————————————————————-

Product Category:     IGBT Modules      BSM400GB60DN2
Manufacturer:     Infineon    
RoHS:     No    
Product:     IGBT Silicon Modules    
Configuration:     Single    
Collector- Emitter Voltage VCEO Max:     1200 V    
Continuous Collector Current at 25 C:     550 A    
Pd – Power Dissipation:     2.7 kW    
Package / Case:     62 mm    
Maximum Operating Temperature:     + 150 C    
Brand:     Infineon Technologies    
Height:     36.5 mm    
Length:     106.4 mm    
Maximum Gate Emitter Voltage:     +/- 20 V    
Minimum Operating Temperature:     – 40 C    
Mounting Style:     Screw    
Factory Pack Quantity:     10    
Width:     61.4 mm
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal bae plate

Shunlongwei Inspected Every BSM400GB60DN2 Before Ship, All BSM400GB60DN2 with 6 months warranty.

Part Number Manufacturer Packaging Descript Qty
X1302V XICOR TSSOP28 605 PCS
TLV2217-33 TI TO220 Low-Dropout Fixed-Voltage Regulators 3-TO-252 0 to 125 2890 PCS
ZMM3V9 ST LL34 803298 PCS
SI-8090 SK TO-220 1980 PCS
PBSS4140 PHILIPS SOT23 PBSS4140DPN – 40 V low VCEsat NPN/PNP transistor TSOP 6-Pin 1668 PCS
MD2534-D2G-X-P/Y M-SYSTEM BGA 2630 PCS
MCP1703T-3002E/CB Microchip SOT-23A 21691 PCS
IPW60R125CP INFINEON TO-247 Power Field-Effect Transistor, 25A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 3991 PCS
A390B Powerex Inc Rectifier Diode, 1 Phase, 1 Element, 400A, 200V V(RRM), Silicon, HERMETIC SEALED, CERAMIC, R62, 2 PIN 1235 PCS
177914-1 AMP (177914-1) AMP POWER DBL LOCK REC (S) 4780 PCS